Low-energy electron irradiation of fullerene films formed on Si(111)-(7x7) surfaces

被引:6
作者
Bolotov, L [1 ]
Kanayama, T [1 ]
机构
[1] Natl Inst Adv Ind Sci & Technol, Joint Res Ctr Atom Technol, Tsukuba, Ibaraki 3058562, Japan
关键词
D O I
10.1063/1.1503155
中图分类号
O59 [应用物理学];
学科分类号
摘要
C-60 films of 4-6 ML formed on Si(111)-(7x7) substrates were irradiated by field-emission (FE) electrons extracted at 15-80 V from probe tips of a scanning tunneling microscope (STM), and resulting evolution of film morphology was observed by the STM. At low extraction voltage, FE electrons stimulated polymerization of adjacent molecules and long-lasting migration of C-60. At extraction voltage above similar to40 V, carbon spheroids less than 2 nm in height were created as a result of diffusion and coalescence of C-60 fragments produced by electronic excitation. (C) 2002 American Institute of Physics.
引用
收藏
页码:1684 / 1686
页数:3
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