Low-energy electron irradiation of fullerene films formed on Si(111)-(7x7) surfaces

被引：6

作者：

Bolotov, L ^{[1
]}

Kanayama, T ^{[1
]}

机构：

[1] Natl Inst Adv Ind Sci & Technol, Joint Res Ctr Atom Technol, Tsukuba, Ibaraki 3058562, Japan

来源：

APPLIED PHYSICS LETTERS | 2002年 / 81卷 / 09期

关键词：

D O I：

10.1063/1.1503155

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

C-60 films of 4-6 ML formed on Si(111)-(7x7) substrates were irradiated by field-emission (FE) electrons extracted at 15-80 V from probe tips of a scanning tunneling microscope (STM), and resulting evolution of film morphology was observed by the STM. At low extraction voltage, FE electrons stimulated polymerization of adjacent molecules and long-lasting migration of C-60. At extraction voltage above similar to40 V, carbon spheroids less than 2 nm in height were created as a result of diffusion and coalescence of C-60 fragments produced by electronic excitation. (C) 2002 American Institute of Physics.

引用

页码：1684 / 1686

页数：3

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