Damage to model DNA fragments from very low-energy (<1 eV) electrons

被引:177
作者
Berdys, J
Anusiewicz, I
Skurski, P
Simons, J [1 ]
机构
[1] Univ Utah, Dept Chem, Salt Lake City, UT 84112 USA
[2] Univ Utah, Henry Eyring Ctr Theoret Chem, Salt Lake City, UT 84112 USA
[3] Univ Gdansk, Dept Chem, PL-80952 Gdansk, Poland
关键词
D O I
10.1021/ja049876m
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Although electrons having enough energy to ionize or electronically excite DNA have long been known to cause strand breaks (i.e., bond cleavages), only recently has it been suggested that even lower-energy electrons (most recently 1 eV and below) can also damage DNA. The findings of the present work suggest that, while DNA bases can attach electrons having kinetic energies in the 1 eV range and subsequently undergo phosphate-sugar O-C sigma bond cleavage, it is highly unlikely (in contrast to recent suggestions) that electrons having kinetic energies near 0 eV can attach to the phosphate unit's P=O bonds. Electron kinetic energies in the 2-3 eV range are required to attach directly to DNA's phosphate group's P=O pi* orbital and induce phosphate-sugar O-C a bond cleavages if the phosphate groups are rendered neutral (e.g., by nearby counterions). Moreover, significant activation barriers to C-O bond breakage render the rates of both such damage mechanisms (i.e., P=O-attached and base-attached) slow as compared to electron autodetachment and to other damage processes.
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页码:6441 / 6447
页数:7
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