Prospects for low-power, high-speed MPUs using 1.5 nm direct-tunneling gate oxide MOSFETs

The ability to operate 1.5 nm direct-tunneling gate oxide MOSFETs it low power and high speed with a low supply voltage in the 0.5 V range is investigated. We extrapolate the performance of current high-end MPUs assuming that conventional 0.4 mu m MOSFETs are replaced by such direct-tunneling gate oxide MOSFETs. A simple estimate shows that the high current drive of direct-tunneling gate oxide MOSFETs may lead to MPUs which operate at frequencies several times higher than today's, while consuming several times less power. (C) 1997 Elsevier Science Ltd.