110 GHz cutoff frequency of ultra-thin gate oxide p-MOSFETs on (110) surface-oriented Si substrate

被引：22

作者：

Momose, HS ^{[1
]}

Ohguro, T ^{[1
]}

Kojima, K ^{[1
]}

Nakamura, S ^{[1
]}

Toyoshima, Y ^{[1
]}

机构：

[1] Toshiba Co Ltd, Isogo Ku, Yokohama, Kanagawa 2358522, Japan

来源：

2002 SYMPOSIUM ON VLSI TECHNOLOGY, DIGEST OF TECHNICAL PAPERS | 2002年

关键词：

D O I：

10.1109/VLSIT.2002.1015431

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The DC and RE analog characteristics of ultra-thin gate oxide CMOS on (110) surface-oriented Si Substrate were investigated for the first time. Gm of p-MOSFET on (110) substrate is 1.9 times greater than that on (100) Substrate even in Pate oxides in direct-tunneling regime. Extremely high Cutoff frequency of 110 GHz was obtained in 0.11 mum oate length p-MOSFFT with 1.5 nm gate oxide.

引用

页码：156 / 157

页数：2