Self-trapping of planar optical beams by use of the photorefractive effect in InP:Fe

被引：76

作者：

Chauvet, M

Hawkins, SA

Salamo, GJ

Segev, M

Bliss, DF

Bryant, G

机构：

[1] PRINCETON UNIV, DEPT ELECT ENGN, PRINCETON, NJ 08544 USA

[2] PRINCETON UNIV, ADV CTR PHOTON & OPTOELECT MAT, PRINCETON, NJ 08544 USA

[3] USAF, ROME LAB, BEDFORD, MA 01731 USA

来源：

OPTICS LETTERS | 1996年 / 21卷 / 17期

关键词：

D O I：

10.1364/OL.21.001333

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We demonstrate what we believe to be the first experimental observation of self-trapping and self-deflection of a planar optical beam by the photorefractive effect in a semiconductor. The semiconductor material is indium phosphide doped with iron. We show that the observed focusing and defocusing effects follow the component of the two-wave-mixing space charge field that is in phase with the intensity pattern, whereas the spatial beam deflection effects follow the 90 degrees-shifted component. (C) 1996 Optical Society of America

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页码：1333 / 1335

页数：3

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