Structure of thin SiO2 films grown on Mo(112) -: art. no. 155404

被引：102

作者：

Chen, MS ^{[1
]}

Santra, AK ^{[1
]}

Goodman, DW ^{[1
]}

机构：

[1] Texas A&M Univ, Dept Chem, College Stn, TX 77842 USA

来源：

PHYSICAL REVIEW B | 2004年 / 69卷 / 15期

关键词：

D O I：

10.1103/PhysRevB.69.155404

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Ultra-thin SiO2 films were prepared by evaporating Si onto a Mo(112) surface followed by oxidation and annealing up to 1200 K. The surface structure and film quality were investigated by low-energy electron diffraction (LEED), Auger spectroscopy (AES), and high-resolution electron energy loss spectroscopy (HREELS). A well-ordered, monolayer Mo(112)-c(2x2)-SiO2 structure was characterized by HREELS and shown to exhibit unique phonon features compared to bulk SiO2. The phonon features are assigned to Si-O-Mo rather than Si-O-Si species, and the surface structure determined to be Mo(112)-c(2x2)-[SiO4] where each of the four oxygen atoms bonds to the substrate Mo atoms.

引用

页码：155404 / 1

页数：7

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