Dielectric constant enhancement due to Si incorporation into HfO2

被引：180

作者：

Tomida, Kazuyuki ^{[1
]}

Kita, Koji ^{[1
]}

Toriumi, Akira ^{[1
]}

机构：

[1] Univ Tokyo, Sch Engn, Dept Mat Engn, Tokyo 1138656, Japan

来源：

APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 14期

基金：

日本学术振兴会;

关键词：

D O I：

10.1063/1.2355471

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The authors investigated the dielectric constant change of Hf(1- x)SixO2 film as functions of Si concentration and annealing temperature. As a result, the dielectric constant of Hf(1- x)SixO2 was increased when doped with a small amount of Si after 800 degrees C annealing. The authors revealed that the dielectric constant enhancement of Hf(1- x)SixO2 films is related to the phase transformation from the monoclinic to the tetragonal phase of HfO2. By using the Clausius-Mossotti relation, it is concluded that the dielectric constant enhancement through the structural phase transformation is derived from the molar volume shrinkage rather than the molar polarizability increase. (c) 2006 American Institute of Physics.

引用

页数：3

共 12 条

[1] Physical and electrical characterization of Hafnium oxide and Hafnium silicate sputtered films [J].

Callegari, A ;

Cartier, E ;

Gribelyuk, M ;

Okorn-Schmidt, HF ;

Zabel, T .

JOURNAL OF APPLIED PHYSICS, 2001, 90 (12) :6466-6475

[2] Permittivity increase of yttrium-doped HfO2 through structural phase transformation -: art. no. 102906 [J].

Kita, K ;

Kyuno, K ;

Toriumi, A .

APPLIED PHYSICS LETTERS, 2005, 86 (10) :1-3

[3] Microscopic model for enhanced dielectric constants in low concentration SiO2-rich noncrystalline Zr and Hf silicate alloys [J].

Lucovsky, G ;

Rayner, GB .

APPLIED PHYSICS LETTERS, 2000, 77 (18) :2912-2914

[4] Materials characterization of ZrO2-SiO2 and HfO2-SiO2 binary oxides deposited by chemical solution deposition [J].

Neumayer, DA ;

Cartier, E .

JOURNAL OF APPLIED PHYSICS, 2001, 90 (04) :1801-1808

[5] Phase separation in hafnium silicates for alternative gate dielectrics - Influence on the unoccupied states [J].

Ramanathan, S ;

McIntyre, PC ;

Luning, J ;

Lysaght, PS ;

Yang, Y ;

Chen, ZQ ;

Stemmer, S .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2003, 150 (10) :F173-F177

[6] HfSiO4 dielectric layers deposited by ALD using HfCl4 and NH2(CH2)3Si(OC2H5)3 precursors [J].

Rittersma, ZM ;

Roozeboom, F ;

Verheijen, MA ;

van Berkum, JGM ;

Dao, T ;

Snijders, JHM ;

Vainonen-Ahlgren, E ;

Tois, E ;

Tuominen, M ;

Haukka, S .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2004, 151 (11) :C716-C722

[7] EFFECTIVE IONIC RADII IN OXIDES AND FLUORIDES [J].

SHANNON, RD ;

PREWITT, CT .

ACTA CRYSTALLOGRAPHICA SECTION B-STRUCTURAL CRYSTALLOGRAPHY AND CRYSTAL CHEMISTRY, 1969, B 25 :925-&

[8] DIELECTRIC POLARIZABILITIES OF IONS IN OXIDES AND FLUORIDES [J].

SHANNON, RD .

JOURNAL OF APPLIED PHYSICS, 1993, 73 (01) :348-366

[9] Kinetic model of si oxidation at HfO2/Si interface with post deposition annealing [J].

Shimizu, H ;

Kita, K ;

Kyuno, K ;

Toriumi, A .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2005, 44 (08) :6131-6135

[10]

Tomida K, 2004, MATER RES SOC SYMP P, V811, P319

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