Advantages of optical modulators with InGaAlAs/InGaAlAs MQW structure

被引:23
作者
Shimizu, J [1 ]
Aoki, M [1 ]
Tsuchiya, T [1 ]
Shirai, M [1 ]
Taike, A [1 ]
Ohtoshi, T [1 ]
Tsuji, S [1 ]
机构
[1] Hitachi Ltd, Cent Res Lab, Tokyo 1858601, Japan
关键词
D O I
10.1049/el:20020551
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
An optical modulator based on an InGaAlAs/InGaAlAs multiple quantum well (MQW) structure is demonstrated. The fabricated device had an extinction ratio 6 dB higher than that of a conventional InGaAsP-based device with similar chirp behaviour. The InGaAlAs MQW effectively improved the performance trade-off between the extinction ratio and chirping parameter.
引用
收藏
页码:821 / 822
页数:2
相关论文
共 11 条
[1]  
Aoki M, 2000, P ECOC 2000, V1, P123
[2]   SIMPLE MEASUREMENT OF FIBER DISPERSION AND OF CHIRP PARAMETER OF INTENSITY-MODULATED LIGHT EMITTER [J].
DEVAUX, F ;
SOREL, Y ;
KERDILES, JF .
JOURNAL OF LIGHTWAVE TECHNOLOGY, 1993, 11 (12) :1937-1940
[3]   A novel method for designing chirp characteristics in electroabsorption MQW optical modulators [J].
Matsuda, M ;
Morito, K ;
Yamaji, K ;
Fujii, T ;
Kotaki, Y .
IEEE PHOTONICS TECHNOLOGY LETTERS, 1998, 10 (03) :364-366
[4]  
Shimizu J, 2001, CLEO(R)/PACIFIC RIM 2001, VOL II, TECHNICAL DIGEST, P54
[5]   Highly reliable 1.3-μm InGaAlAs MQW DFB lasers [J].
Sudoh, TK ;
Takemoto, D ;
Tsuchiya, T ;
Aoki, M ;
Tsuji, S .
2000 IEEE 17TH INTERNATIONAL SEMICONDUCTOR LASER CONFERENCE, CONFERENCE DIGEST, 2000, :55-56
[6]  
TAKEMOTO D, 2000, 5 OPT COMM C CHIB JA, P542
[7]  
Tsuchiya T, 2001, CLEO(R)/PACIFIC RIM 2001, VOL II, TECHNICAL DIGEST, P42
[8]   Low-threshold and high-temperature characteristics of 1.3-μ m InGaAlAs MQW lasers grown by metalorganic vapor-phase epitaxy [J].
Tsuchiya, T ;
Takemoto, D ;
Sudou, T ;
Aoki, M .
2000 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, CONFERENCE PROCEEDINGS, 2000, :266-269
[9]   Very-high-allowability of incidental optical power for polarization-insensitive InGaAs/InAlAs multiple quantum well modulators buried in semi-insulating InP [J].
Wakita, K ;
Kotaka, I ;
Matsumoto, S ;
Iga, R ;
Kondo, S ;
Noguchi, Y .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1998, 37 (3B) :1432-1435
[10]   INCREASED OPTICAL SATURATION INTENSITIES IN GAINAS MULTIPLE QUANTUM-WELLS BY THE USE OF ALGAINAS BARRIERS [J].
WOOD, TH ;
CHANG, TY ;
PASTALAN, JZ ;
BURRUS, CA ;
SAUER, NJ ;
JOHNSON, BC .
ELECTRONICS LETTERS, 1991, 27 (03) :257-259