Characteristics of InSb grown on single crystalline Mn-Zn ferrite substrates

被引：19

作者：

Fujioka, H ^{[1
]}

Ikeda, T ^{[1
]}

Ono, K ^{[1
]}

Ito, S ^{[1
]}

Oshima, M ^{[1
]}

机构：

[1] Univ Tokyo, Dept Appl Chem, Bunkyo Ku, Tokyo 1138656, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 2002年 / 241卷 / 03期

关键词：

molecular beam epitaxy; antimonides; semiconducting III-V materials;

D O I：

10.1016/S0022-0248(02)01311-8

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We have grown InSb on a single crystalline Mn-Zn ferrite substrate with molecular beam epitaxy. In spite of large lattice mismatch (about 24%), we have succeeded in obtaining epitaxial films. The reflection high-energy electron diffraction and X-ray diffraction measurements have revealed that (1 1 1) InSb grows on (1 1 0) MnZn ferrite substrate with an in-plane alignment of [1 1 2] InSb parallel to [0 0 1] Mn-Zn ferrite. X-ray photoelectron spectroscopy measurements have shown that the thickness of the interface layer in which the interdiffusion of O, Zn, and Fe occurs is < 1 nm. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：309 / 312

页数：4

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