Flash technology: Challenges and opportunities

被引:11
作者
Giridhar, RV
机构
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1996年 / 35卷 / 12B期
关键词
flash; semiconductor; memory; scaling; voltage; tunneling; multi-level cell;
D O I
10.1143/JJAP.35.6347
中图分类号
O59 [应用物理学];
学科分类号
摘要
Flash memory is a rapidly growing segment of the semiconductor memory among semiconductor memories by offering the combination of non-volatility, electrical re-writability and high density. Several alternate Flash cell structures have evolved that offer differing tradeoffs for cost and performance. The Mash memory market has been valued over $l.9 Billion (US) in 1995 and accounts for about 3.5% of the overall semiconductor memory market. Flash memory is the fastest growing segment of the non-volatile semiconductor memory market. This paper examines the challenges and opportunities in Flash technology using ETOX(TM) cells as an example. Flash poses some unique challenges in controlling tunneling and in voltage scaling. Flash also presents a unique opportunity for scaling storage density through multi-level cells.
引用
收藏
页码:6347 / 6350
页数:4
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