Effect of ultraviolet irradiation on the charge state of ion-implanted silicon-silicon dioxide structures

被引：3

作者：

Baraban, AP ^{[1
]}

Malyavka, LV ^{[1
]}

机构：

[1] St Petersburg State Univ, Inst Phys, St Petersburg 199164, Russia

来源：

TECHNICAL PHYSICS LETTERS | 2000年 / 26卷 / 02期

关键词：

Silicon; Dioxide; Charge State; Depth Profile; Ultraviolet Irradiation;

D O I：

10.1134/1.1262775

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effect of irradiation with the light from a near-ultraviolet range (NUV irradiation) on the charge state of Si-SiO2 structures with an argon-implanted silicon dioxide layer was studied. The method of depth profiling based on the measurement of high-frequency capacitance-voltage characteristics of an electrolyte-dielectric-semiconductor system in combination with etching of the dielectric layer was used. It was established that the NUV irradiation resulted in the recharge of positively charged amphoteric centers (formed due to ion implantation in the silicon dioxide layer of the Si-SiO2 structures) into negatively charged ones. (C) 2000 MAIK "Nauka/Interperiodica".

引用

页码：159 / 160

页数：2