Optical and structural properties of ZnCdSe/ZnSSe/ZnMgSSe separate confinement heterostructures

被引：7

作者：

Oh, E ^{[1
]}

Lee, SD ^{[1
]}

Jung, HD ^{[1
]}

Kim, JR ^{[1
]}

Kim, MD ^{[1
]}

Kim, BJ ^{[1
]}

Ji, JK ^{[1
]}

Park, HS ^{[1
]}

Kim, TI ^{[1
]}

Ivanov, SV ^{[1
]}

Toropov, AA ^{[1
]}

Shubina, TV ^{[1
]}

机构：

[1] AF IOFFE PHYS TECH INST,ST PETERSBURG,RUSSIA

来源：

JOURNAL OF APPLIED PHYSICS | 1996年 / 80卷 / 10期

关键词：

D O I：

10.1063/1.363590

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have grown ZnCdSe/ZnSSe/ZnMgSSe separate confinement heterostructures by molecular-beam epitaxy. Strain on the ZnSSe layer is calculated from x-ray and photoluminescence data. The temperature dependence of band-gap energy and the photoluminescence intensity in the Cl-doped ZnCdSe active layers is compared with that of undoped ones. (C) 1996 American Institute of Physics.

引用

页码：5951 / 5954

页数：4

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