Spin-transport dynamics of optically spin-polarized electrons in GaAs quantum wires

被引：14

作者：

Sogawa, T ^{[1
]}

Ando, H ^{[1
]}

Ando, S ^{[1
]}

机构：

[1] NTT, Basic Res Labs, Atsugi, Kanagawa 2430198, Japan

来源：

PHYSICAL REVIEW B | 2000年 / 61卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.61.5535

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We investigate the drift and diffusion dynamics of optically spin-polarized electrons in p-type rectangular GaAs/AlAs quantum wires with small (10 nm) lateral sizes by time- and spatially resolved photoluminescence measurement. The drift process causes a rapid expansion of the spin-polarized electrons, keeping the spin polarization beyond by 10 mu m. We theoretically analyze the transport characteristics of spin-polarized electrons and their spin-relaxation dynamics based on a drift-diffusion model which includes a spin-flip process; Experiment can be consistently explained by considering that the dependence of the diffusivity and mobility on the degree of the spin polarization, demonstrating the possibility of spin-dependent electron-electron scattering that affects the transport properties in one-dimensional structures.

引用

收藏

页码：5535 / 5539

页数：5

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