Experimental and theoretical study of the electronic structures of Ni3Al, Ni3Ga, Ni3In, and NiGa

被引：23

作者：

Hsu, LS ^{[1
]}

Wang, YK

Guo, GY

机构：

[1] Natl Chang Hua Univ Educ, Dept Phys, Changhua 50058, Taiwan

[2] Natl Taiwan Univ, Dept Phys, Taipei 107, Taiwan

[3] Synchrotron Radiat Res Ctr, Hsinchu 300, Taiwan

来源：

JOURNAL OF APPLIED PHYSICS | 2002年 / 92卷 / 03期

关键词：

D O I：

10.1063/1.1491018

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The electronic structures of Ni3Al, Ni3Ga, Ni3In, and NiGa are studied by x-ray absorption near-edge spectra (XANES) at the Ni and Ga K edges. The XANES spectra are compared with those calculated with theory. The experimental XANES features for these compounds reflect the Ni- and Ga-p unoccupied density of states. The calculated magnetic moments for Ni3Al, Ni3Ga, and Ni3In are between 0.7-0.8 mu(B)/cell. The number of 3d holes per Ni atom is calculated for Ni3Al, Ni3Ga, and Ni3In. These numbers show correlation with heats of formation of the bulk compounds. (C) 2002 American Institute of Physics.

引用

页码：1419 / 1424

页数：6

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