Effect of surface free energy in gate dielectric in pentacene thin-film transistors

被引:100
作者
Chou, Wei-Yang [1 ]
Kuo, Chia-Wei
Cheng, Horng-Long
Chen, Yi-Ren
Tang, Fu-Ching
Yang, Feng-Yu
Shu, Dun-Yin
Liao, Chi-Chang
机构
[1] Natl Cheng Kung Univ, Inst Electroopt Sci & Engn, Tainan 701, Taiwan
[2] Natl Cheng Kung Univ, Dept Phys, Tainan 701, Taiwan
[3] Ind Technol Res Inst, Mat & Chem Res Labs, Hsinchu 310, Taiwan
[4] Ind Technol Res Inst, Elect & Optoelect Res Labs, Hsinchu 310, Taiwan
关键词
D O I
10.1063/1.2354426
中图分类号
O59 [应用物理学];
学科分类号
摘要
The surface free energy of a dielectric has a strong influence on the performance of pentacene thin-film transistors. Research shows that by matching surface free energy in the interface of the dielectric and the orthorhombic thin-film phase of pentacene film, the field-effect mobility of transistors is enhanced reaching above 2.0 cm(2)/V s. The authors suggested that a more complete first monolayer of pentacene was formed upon the gate dielectric surface with almost identical surface free energy, benefiting carrier transportation. The research also discusses the mechanism of surface free energy effects on the crystalline size and structural disorder in pentacene film. (c) 2006 American Institute of Physics.
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页数:3
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