A new current scaling pixel circuit for AMOLED

被引：59

作者：

Lee, JH ^{[1
]}

Nam, WJ ^{[1
]}

Jung, SH ^{[1
]}

Han, MK ^{[1
]}

机构：

[1] Seoul Natl Univ, Sch Elect Engn, Seoul 151742, South Korea

来源：

IEEE ELECTRON DEVICE LETTERS | 2004年 / 25卷 / 05期

关键词：

active-matrix organic light-emitting diode (AMOLED); current scaling; pixel design; poly-Si TFT;

D O I：

10.1109/LED.2004.826567

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new active-matrix organic light-emitting diode (AMOLED) pixel design, composed of four polycrystalline silicon thin-film transistor (poly-Si TFT) and one capacitor, is proposed by employing a novel current scaling scheme. The simulation results, based on the measured characteristics of an OLED and poly-Si TFTs, show that the proposed pixel design would scale down the data current more effectively, so as to guarantee a lower charging time compared with the conventional current mirror structure, as well as successfully compensate the variation of the electrical characteristics of the poly-Si TFTs, such as the threshold voltage and mobility.

引用

页码：280 / 282

页数：3

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