Growth of lead selenide thin films by the successive ionic layer adsorption and reaction (SILAR) technique

被引:38
作者
Kanniainen, T
Lindroos, S
Ihanus, J
Leskela, M
机构
关键词
D O I
10.1039/jm9960600983
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
This paper describes the growth of lead selenide(PbSe) thin films on glass and on ITO-covered glass substrates at room temperature under normal pressure utilising the successive ionic layer adsorption and reaction (SILAR) technique. Aqueous precursor solutions, lead acetate complexed with triethanolamine and sodium selenosulfate, were used for lead and selenide, respectively. The films were found to be metallic and adherent. The properties of the films were characterised by means of X-ray diffraction (XRD), Rutherford back-scattering spectrometry (RES), nuclear reaction analysis (NRA) and scanning electron microscopy (SEM).
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页码:983 / 986
页数:4
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