Device physics and state-of-the-art of quantum well infrared photodetectors and arrays

被引：25

作者：

Tidrow, MZ ^{[1
]}

机构：

[1] USA, Res Lab, Adelphi, MD 20783 USA

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2000年 / 74卷 / 1-3期

关键词：

QWIP; IR detector; focal plane array; thermal imaging;

D O I：

10.1016/S0921-5107(99)00532-2

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Quantum well infrared photodetectors (QWIPs) have been developed very quickly and large format focal plane arrays with low noise equivalent temperature difference, and high uniformity and operability have been demonstrated. Using high quality GaAs material systems, QWIPs have the potential for high production yield, low cost and low power consumption. QWIP's multicolor detection capability makes it especially attractive for advanced infrared sensor systems. The basic device physics and detector design of QWIP structures will be given in this paper. A brief comparison of QWIPs with HgCdTe detectors will be discussed, and the state-of-the-art of the QWIP focal plane array technology will be presented. (C) 2000 Published by Elsevier Science S.A. All rights reserved.

引用

页码：45 / 51

页数：7

共 44 条

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