Electronic structure of Si and Ge gold-doped clathrates

被引：84

作者：

Herrmann, RFW

Tanigaki, K

Kawaguchi, T

Kuroshima, S

Zhou, O

机构：

[1] Osaka City Univ, Fac Sci, Sumiyoshi Ku, Osaka 5588585, Japan

[2] NEC Fundamental Res Labs, Tsukuba, Ibaraki 305, Japan

[3] Univ Tokyo, Sch Sci, Dept Phys, Bunkyo Ku, Tokyo 113, Japan

[4] Univ N Carolina, Dept Phys & Astron, Chapel Hill, NC 27599 USA

[5] Univ N Carolina, Curriculum Appl & Mat Sci, Chapel Hill, NC 27599 USA

来源：

PHYSICAL REVIEW B | 1999年 / 60卷 / 19期

关键词：

D O I：

10.1103/PhysRevB.60.13245

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The electronic properties of single phase type-I clathrate compounds, Ba8Au6(Si or Ge)(40) and Ba8Ge46-x have been investigated. The crystal structure, electrical resistivities, magnetic susceptibilities, the density of states at the Fermi level, and the band gap (where applicable) were determined. Ba8Au6Si40 and Ba8Au6Ge40 show a metallic behavior whereas Ba8Ge46-x is semiconducting. On a basis of this work, a first evidence is presented of the existence of type-I mixed-clathrates containing both silicon and germanium. [S0163-1829(99)09743-X].

引用

页码：13245 / 13248

页数：4

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