High spatial resolution quantitative microwave impedance microscopy by a scanning tip microwave near-field microscope

被引：191

作者：

Gao, C ^{[1
]}

Wei, T ^{[1
]}

Duewer, F ^{[1
]}

Lu, YL ^{[1
]}

Xiang, XD ^{[1
]}

机构：

[1] UNIV CALIF BERKELEY, LAWRENCE BERKELEY LAB, DIV MAT SCI, BERKELEY, CA 94720 USA

来源：

APPLIED PHYSICS LETTERS | 1997年 / 71卷 / 13期

关键词：

D O I：

10.1063/1.120444

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A recently developed scanning tip microwave near-field microscope has been improved to achieve a spatial resolution of 100 nm (similar to lambda/10(6)). Furthermore, explicit calculations of the field distribution using a simplified model allow quantitative microscopy of dielectric properties for dielectric materials. A detection sensitivity of delta epsilon/epsilon similar to 6x10(-4) has been achieved. (C) 1997 American Institute of Physics.

引用

页码：1872 / 1874

页数：3

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