Characterization of InGaN multiquantum well structures for blue semiconductor laser diodes

被引：23

作者：

Nishio, J

Sugiura, L

Fujimoto, H

Kokubun, Y

Itaya, K

机构：

[1] Mat. and Devices Res. Laboratories, Research and Development Center, Toshiba Corporation 1, Saiwai-ku, Kawasaki 210, Komukai Toshiba-cho

来源：

APPLIED PHYSICS LETTERS | 1997年 / 70卷 / 25期

关键词：

D O I：

10.1063/1.119193

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In0.15Ga0.85N/GaN and In0.15Ga0.85N/In0.05Ga0.95N multi quantum well (MQW) structures grown on (0001) sapphire substrates were investigated by high-resolution x-ray diffraction and cross-sectional transmission electron microscopy. The results show that ultrathin MQWs with fairly good crystallinity and precisely controlled clear parallel interfaces were grown. Laser diode structures with MQWs were also studied, and the results suggest that these superlattice structures retain their high quality even after being subjected to high temperatures during the subsequent growth of p-type GaN as the optical guiding layer, p-type GaAlN as the cladding layer, and p-type GaN as the contact layer. (C) 1997 American Institute of Physics.

引用

页码：3431 / 3433

页数：3

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