Direct spectral probing of energy storage in Si:Er by a free-electron laser

被引:28
作者
Gregorkiewicz, T
Thao, DTX
Langer, JM
机构
[1] Univ Amsterdam, Van der Waals Zeeman Inst, NL-1018 XE Amsterdam, Netherlands
[2] Polish Acad Sci, Inst Phys, PL-02668 Warsaw, Poland
[3] Polish Acad Sci, Inst Phys, Hanoi, Vietnam
关键词
D O I
10.1063/1.125556
中图分类号
O59 [应用物理学];
学科分类号
摘要
Results of a two-color spectroscopy in the visible and the mid-infrared on erbium-doped silicon (Si:Er) are presented. In the experiments, pulsed beam provided by a free-electron laser is directed on a sample under primary above-band-gap excitation with another laser. It is shown that the powerful infrared beam can be ionize carriers localized at shallow traps. Liberation of these carriers makes them available for excitation of erbium and thereby enhances the luminescence intensity. Identification of shallow levels responsible for the effect is discussed. (C) 1999 American Institute of Physics. [S0003-6951(99)00352-6].
引用
收藏
页码:4121 / 4123
页数:3
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