Interface study on heterostructured GaP-GaAs nanowires

被引：48

作者：

Borgstrom, Magnus T.

Verheijen, Marcel A.

Immink, George

de Smet, Thierry

Bakkers, Erik P. A. M.

机构：

[1] Philips Res Labs, NL-5656 AA Eindhoven, Netherlands

[2] Cedova, NL-5656 AA Eindhoven, Netherlands

来源：

NANOTECHNOLOGY | 2006年 / 17卷 / 16期

关键词：

D O I：

10.1088/0957-4484/17/16/002

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The interface chemical composition of heterostructured GaP-GaAs nanowire segments was studied by the use of energy-dispersive x-ray analysis. An arsenic-rich tail in the GaP segments following GaAs could be minimized by reducing the AsH(3) molar fraction and the growth rate. For the temperature regime used for vapour-liquid-solid growth, we observe the opposite trend on interface sharpness compared to high-temperature layer-by-layer

引用

收藏

页码：4010 / 4013

页数：4

相关论文

共 26 条

[1] Epitaxial growth of InP nanowires on germanium [J].

Bakkers, EPAM ;

Van Dam, JA ;

De Franceschi, S ;

Kouwenhoven, LP ;

Kaiser, M ;

Verheijen, M ;

Wondergem, H ;

Van der Sluis, P .

NATURE MATERIALS, 2004, 3 (11) :769-773

[2] Few-electron quantum dots in nanowires [J].

Bjork, MT ;

Thelander, C ;

Hansen, AE ;

Jensen, LE ;

Larsson, MW ;

Wallenberg, LR ;

Samuelson, L .

NANO LETTERS, 2004, 4 (09) :1621-1625

[3] One-dimensional heterostructures in semiconductor nanowhiskers [J].

Björk, MT ;

Ohlsson, BJ ;

Sass, T ;

Persson, AI ;

Thelander, C ;

Magnusson, MH ;

Deppert, K ;

Wallenberg, LR ;

Samuelson, L .

APPLIED PHYSICS LETTERS, 2002, 80 (06) :1058-1060

[4]

Borgström MT, 2005, NANO LETT, V5, P1439, DOI 10.1021/nl050802y

[5] FINITE INTERFACE EFFECTS FOR THIN GAINAS/INP QUANTUM-WELLS GROWN BY LP-MOVPE WITH A GROWTH INTERRUPTION SEQUENCE [J].

CAMASSEL, J ;

LAURENTI, JP ;

JUILLAGUET, S ;

REINHARDT, F ;

WOLTER, K ;

KURZ, H ;

GRUTZMACHER, D .

JOURNAL OF CRYSTAL GROWTH, 1991, 107 (1-4) :543-548

[6] Single-electron tunneling in InP nanowires [J].

De Franceschi, S ;

van Dam, JA ;

Bakkers, EPAM ;

Feiner, LF ;

Gurevich, L ;

Kouwenhoven, LP .

APPLIED PHYSICS LETTERS, 2003, 83 (02) :344-346

[7] HOMOGENEOUS AND HETEROGENEOUS THERMAL-DECOMPOSITION RATES OF TRIMETHYLGALLIUM AND ARSINE AND THEIR RELEVANCE TO THE GROWTH OF GAAS BY MOCVD [J].

DENBAARS, SP ;

MAA, BY ;

DAPKUS, PD ;

DANNER, AD ;

LEE, HC .

JOURNAL OF CRYSTAL GROWTH, 1986, 77 (1-3) :188-193

[8] Tunable supercurrent through semiconductor nanowires [J].

Doh, YJ ;

van Dam, JA ;

Roest, AL ;

Bakkers, EPAM ;

Kouwenhoven, LP ;

De Franceschi, S .

SCIENCE, 2005, 309 (5732) :272-275

[9] Growth of nanowire superlattice structures for nanoscale photonics and electronics [J].

Gudiksen, MS ;

Lauhon, LJ ;

Wang, J ;

Smith, DC ;

Lieber, CM .

NATURE, 2002, 415 (6872) :617-620

[10] EFFECT OF GROWTH-PARAMETERS ON THE INTERFACIAL STRUCTURE OF GAINAS/INP QUANTUM-WELLS [J].

HERGETH, J ;

GRUTZMACHER, D ;

REINHARDT, F ;

BALK, P .

JOURNAL OF CRYSTAL GROWTH, 1991, 107 (1-4) :537-542