Dopant emission mechanism and the effects of host materials on the behavior of doped organic light-emitting diodes

被引：25

作者：

Qiu, CF ^{[1
]}

Chen, HY ^{[1
]}

Wong, M ^{[1
]}

Kwok, HS ^{[1
]}

机构：

[1] Hong Kong Univ Sci & Technol, Dept Elect & Elect Engn, Ctr Display Res, Kowloon, Hong Kong, Peoples R China

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2002年 / 49卷 / 09期

关键词：

carrier trapping; doping; emission mechanism; lifetime; organic light-emitting diode;

D O I：

10.1109/TED.2002.802620

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Organic light-emitting diodes made of tris-8-(hydroxyquinoline) aluminum as the electron-transport layers, N, N'-diphenyl-N, N' bis (3-methylphenyl)-1, 1'-biphenyl-4, 4'-diamine (TPD) as the hole-transport layers, and 2-(1, 1-dimethylethyl)-6(2-(2, 3, 6, 7-tetrahydro-1, 1, 7, 7-tetramethyl-1H, 5H-benzo(ij) quinolizin-9-yl) ethenyl)-4H-pyran-4-ylidene) propanedinitrile (DCJTB) as the guest dopant have been studied. It is determined that a) emission from guest DCJTB in a host transport material results primarily from separate trapping of holes and electrons, rather than the more commonly proposed Forster transfer mechanism, b) DCJTB is a more efficient hole than electron trap, and c) the lifetime of a doped device is longer when TPD is used as the host material.

引用

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页码：1540 / 1544

页数：5

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