High efficient light-emitting diodes with antireflection subwavelength gratings

被引：82

作者：

Kanamori, Y ^{[1
]}

Ishimori, M ^{[1
]}

Hane, K ^{[1
]}

机构：

[1] Tohoku Univ, Dept Mechatron & Precis Engn, Sendai, Miyagi 9808579, Japan

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2002年 / 14卷 / 08期

关键词：

electron beam lithography; etching; gratings; light-emitting diodes; nanotechnology; periodic structures;

D O I：

10.1109/LPT.2002.1021970

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A two-dimensional subwavelength grating (SWG) has been fabricated on a GaAlAs light-emitting diode (LED). The SWG is patterned by electron beam lithography and etched by fast atom beam with Cl-2 and SF6 gases. The fabricated grating has 200-nm period and the tapered grating shape with aspect ratio of 1.38 to prevent reflection in the spectral region including 850 nm light emission. The emission is increased by 21.6% at the normal emission angle. The total emittance is increased by 60% with the SWG in comparison with that of the flat surface.

引用

页码：1064 / 1066

页数：3

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