Cross-sectional nanoindentation:: A new technique for thin film interfacial adhesion characterization

被引:112
作者
Sánchez, JM
El-Mansy, S
Sun, B
Scherban, T
Fang, N
Pantuso, D
Ford, W
Elizalde, MR
Martínez-Esnaola, JM
Martín-Meizoso, A
Gil-Sevillano, J
Fuentes, M
Maiz, J
机构
[1] Ctr Estudios & Invest Tecn Gipuzkoa, San Sebastian 20018, Spain
[2] Univ Navarra, Escuela Super Ingn, San Sebastian 20080, Spain
[3] Intel Co, Hillsboro, OR 97124 USA
[4] Intel Co, Santa Clara, CA 95051 USA
关键词
thin films; dielectrics; interface; fracture toughness; hardness testing;
D O I
10.1016/S1359-6454(99)00254-2
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Interfacial adhesion is becoming a critical material property for improving the reliability of multilayer thin film structures used in microelectronics. Cross-sectional nanoindentation (CSN) is a new mechanical test especially designed for measuring the fracture toughness of thin film interfaces. Interfacial fracture is achieved by nanoindentation in the structure cross-section. A model based on the elastic plate theory has been developed to calculate numerically the interfacial critical energy release rate (G(ci)) for ceramic-ceramic systems from CSN test results. The model inputs are the thin film elastic properties, thin film thickness, interfacial crack area and maximum thin him deflection during the test. Closed form analytical solutions, obtained for two limiting cases, are consistent with the numerical approach. This technique has been successfully applied to silicon nitride-silicon oxide thin films, commonly used as electrical isolators in microelectronic devices. (C) 1999 Acta Metallurgica Inc. Published by Elsevier Science Ltd. Ali rights Reserved.
引用
收藏
页码:4405 / 4413
页数:9
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