Variable current transport in polymer thin film transistors

被引:9
作者
Marinov, O
Deen, MJ [1 ]
Yu, JF
Vamvounis, G
Holdcroft, S
Woods, W
机构
[1] McMaster Univ, Dept Elect & Comp Engn, Hamilton, ON L8S 4K1, Canada
[2] Simon Fraser Univ, Dept Chem, Burnaby, BC V5A 1S6, Canada
[3] Simon Fraser Univ, Sch Engn Sci, Burnaby, BC V5A 1S6, Canada
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | 2004年 / 22卷 / 03期
关键词
D O I
10.1116/1.1649988
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The performance of polymer thin film transistors, made of different semiconducting polymers, depends mostly on the type of polymer and its deposition conditions. For these polymer field-effect transistors (PFETs), the current transport is limited by the carrier injection from the source electrode into the polymer. The disordered polymer molecules near the injection interface randomize and decrease the injection barrier, resulting in a large variation of the PFET characteristics, such as threshold voltage, leakage current, and mobility. The PFET current-voltage characteristics degrade at temperatures higher than 40 degreesC and the low frequency noise increases by 0.3 dB/degreesC. (C) 2004 American Vacuum Society.
引用
收藏
页码:755 / 759
页数:5
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