Application of solid immersion lens to high-resolution photoluminescence imaging of patterned GaAs quantum wells

被引：21

作者：

Sasaki, T

Baba, M

Yoshita, M

Akiyama, H

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1997年 / 36卷 / 7B期

关键词：

solid immersion lens; GaAs; quantum well; photoluminescence; microscopy; imaging;

D O I：

10.1143/JJAP.36.L962

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The solid immersion lens has been applied to high-resolution microscopic photoluminescence (PL) imaging of a strip-line-patterned GaAs quantum well structure. An improved resolution corresponding to the numerical aperture of 1.25 was realized. The enhanced emission of PL from edges, and the significantly increased collection efficiency of PL were demonstrated.

引用

页码：L962 / L964

页数：3

共 7 条

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