Counter-doped MOSFET's of 4H-SiC

被引：38

作者：

Ueno, K ^{[1
]}

Oikawa, T ^{[1
]}

机构：

[1] Fuji Elect Corp Res & Dev Ltd, Matsumoto, Nagano 3900821, Japan

来源：

IEEE ELECTRON DEVICE LETTERS | 1999年 / 20卷 / 12期

关键词：

channel mobility; counter-doping; field effect mobility; 4H-SiC; interface; MOSFET; oxidation; threshold voltage;

D O I：

10.1109/55.806105

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, we investigate the effect of counter-doping of nitrogen at the channel region of epitaxial n-channel 4H-SiC MOSFET's on the channel mobility and the threshold voltage, From this study, me have found that the channel mobility steeply improves as the nitrogen dose increases, At a dose of 2 x or 2.5 x 10(12) cm(-2) the enhancement MOSFET has achieved an effective channel mobility of 20 cm(2)/Vs or a field effect mobility of 38 cm(2)/Vs at a peak.

引用

页码：624 / 626

页数：3

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