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Effect of processing on the overlay performance of a wafer stepper
被引：21
作者：
Dirksen, P
Juffermans, C
Leeuwestein, A
Mutsaers, C
Nuijs, A
Pellens, R
Wolters, R
Gemen, J
机构：
来源：
METROLOGY, INSPECTION, AND PROCESS CONTROL FOR MICROLITHOGRAPHY XI
|
1997年
/
3050卷
关键词：
overlay;
processing;
simulation;
alignment;
D O I：
10.1117/12.275950
中图分类号：
TM [电工技术];
TN [电子技术、通信技术];
学科分类号：
0808 ;
0809 ;
摘要：
The effects of resist spinning, aluminum sputtering and chemical mechanical polishing (CMP) on the observed alignment position in ASML wafer steppers are presented. Vector maps of the process induced alignment shifts are shown fur various processing conditions. The deposition experiments are compared with simulations (DEPICT) and a specially designed alignment system modeling program.
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页码：102 / 113
页数：12
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