Is sulfur a donor in diamond?

被引：107

作者：

Kalish, R ^{[1
]}

Reznik, A

Uzan-Saguy, C

Cytermann, C

机构：

[1] Technion Israel Inst Technol, Inst Solid State, IL-32000 Haifa, Israel

[2] Technion Israel Inst Technol, Dept Phys, IL-32000 Haifa, Israel

来源：

APPLIED PHYSICS LETTERS | 2000年 / 76卷 / 06期

关键词：

D O I：

10.1063/1.125885

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Homoepitaxial diamond layers grown by chemical-vapor deposition in the presence of H2S, which were published to exhibit n-type conductivity, are carefully analyzed both electrically and structurally. Hall-effect measurements as a function of temperature clearly show the samples to exhibit p-type conduction, with an activation energy, carrier concentrations, and mobilities which very much resemble those of B-doped p-type diamond. Secondary-ion-mass spectroscopy confirms that indeed the samples, previously claimed to be n type due to a donor state attributed to sulfur, contain enough unintentional boron to explain the observed p-type features. (C) 2000 American Institute of Physics. [S0003-6951(00)04606-4].

引用

页码：757 / 759

页数：3

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PHYSICAL REVIEW B, 1999, 60 (04) :R2139-R2141

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