A New Approach for the study of chemical mechanical polishing

被引：15

作者：

Devecchio, D ^{[1
]}

Schmutz, P ^{[1
]}

Frankel, GS ^{[1
]}

机构：

[1] Ohio State Univ, Dept Mat Sci & Engn, Fontana Corros Ctr, Columbus, OH 43210 USA

来源：

ELECTROCHEMICAL AND SOLID STATE LETTERS | 2000年 / 3卷 / 02期

关键词：

D O I：

10.1149/1.1390967

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

The process of chemical mechanical polishing (CMP) can be studied using in situ atomic force microscopy (AFM) by intentionally using a high tip/sample interaction force. The nominal removal rate of Al during AFM scratching is studied under a range of conditions including varying tip/sample force, solution pH, and electrode potential. This approach should bt? useful far CMP process development and furthering the fundamental understanding of CMP mechanisms. (C) 1999 The Electrochemical Society. S1099-0062(99)09-098-7. All rights reserved.

引用

页码：90 / 92

页数：3

共 5 条

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