Air-stable n-channel organic transistors based on a soluble C84 fullerene derivative

被引：84

作者：

Anthopoulos, Thomas D. ^{[1
]}

Kooistra, Floris B.

Wondergem, Harry J.

Kronholm, David

Hummelen, Jan C.

de Leeuw, Dago M.

机构：

[1] Univ London Imperial Coll Sci Technol & Med, Blackett Lab, Dept Phys, London SW7 2BW, England

[2] Univ Groningen, Mat Sci Ctr Plus, NL-9747 AG Groningen, Netherlands

[3] Solenne BV, NL-9747 AN Groningen, Netherlands

来源：

ADVANCED MATERIALS | 2006年 / 18卷 / 13期

关键词：

D O I：

10.1002/adma.200600068

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Air-stable n-channel organic transistors are fabricated using a newly synthesized soluble fullerene derivative. The airstable nature of this molecule allows the realization of complementary circuits under ambient conditions without encapsulation. As shown in the figure, the I-V characteristics of the devices are retained even after exposure to air for a week. To the best of our knowledge, this is the first demonstration of an air-stable electron-transporting fullerene-based molecule.

引用

页码：1679 / +

页数：7

共 33 条

[1] Solution processible organic transistors and circuits based on a C70 methanofullerene -: art. no. 054503
Anthopoulos, TD
de Leeuw, DM
Cantatore, E
van 't Hof, P
Alma, J
Hummelen, JC
[J]. JOURNAL OF APPLIED PHYSICS, 2005, 98 (05)
[2] Organic complementary-like inverters employing methanofullerene-based ambipolar field-effect transistors
Anthopoulos, TD
de Leeuw, DM
Cantatore, E
Setayesh, S
Meijer, EJ
Tanase, C
Hummelen, JC
Blom, PWM
[J]. APPLIED PHYSICS LETTERS, 2004, 85 (18) : 4205 - 4207
[3] Ambipolar organic field-effect transistors based on a solution-processed methanofullerene
Anthopoulos, TD
Tanase, C
Setayesh, S
Meijer, EJ
Hummelen, JC
Blom, PWM
de Leeuw, DM
[J]. ADVANCED MATERIALS, 2004, 16 (23-24) : 2174 - +
[4] Characterization of six isomers of [84]fullerene C84 by electrochemistry, electron spin resonance spectroscopy, and molecular energy levels calculations
Azamar-Barrios, JA
Dennis, TJS
Sadhukan, S
Shinohara, H
Scuseria, GE
Pénicaud, A
[J]. JOURNAL OF PHYSICAL CHEMISTRY A, 2001, 105 (19) : 4627 - 4632
[5] Singlet excited state (S1) of higher fullerenes C76 and C84:: correlation between lifetime and HOMO-LUMO energy gap
Cho, HS
Ahn, TK
Yang, SI
Jin, SM
Kim, D
Kim, SK
Kim, HD
[J]. CHEMICAL PHYSICS LETTERS, 2003, 375 (3-4) : 292 - 298
[6] Large-scale complementary integrated circuits based on organic transistors
Crone, B
Dodabalapur, A
Lin, YY
Filas, RW
Bao, Z
LaDuca, A
Sarpeshkar, R
Katz, HE
Li, W
[J]. NATURE, 2000, 403 (6769) : 521 - 523
[7] DELEEUW DM, 1999, Patent No. 6133835
[8] THE HIGHER FULLERENES - ISOLATION AND CHARACTERIZATION OF C76, C84, C90, C94, AND C70O, AN OXIDE OF D5H-C70
DIEDERICH, F
ETTL, R
RUBIN, Y
WHETTEN, RL
BECK, R
ALVAREZ, M
ANZ, S
SENSHARMA, D
WUDL, F
KHEMANI, KC
KOCH, A
[J]. SCIENCE, 1991, 252 (5005) : 548 - 551
[9] Dimitrakopoulos CD, 2002, ADV MATER, V14, P99, DOI 10.1002/1521-4095(20020116)14:2<99::AID-ADMA99>3.0.CO
[10] 2-9

← 1 2 3 4 →