Initial interface reaction in indium/amorphous selenium multilayer thin films

被引:2
作者
Lu, K
Perepezko, JH
Lindahl, KA
Lanning, B
机构
[1] CHINESE ACAD SCI,INST MET RES,STATE KEY LAB RSA,SHENYANG 110015,PEOPLES R CHINA
[2] COLORADO SCH MINES,DEPT MET & MAT ENGN,GOLDEN,CO 80401
[3] LACKHEED MARTIN AEROSP,LITTLETON,CO 80127
关键词
D O I
10.1080/095008397179057
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Interface reactions between In and amorphous Se (a-Se) layers have been studied using differential scanning calorimetry (DSC) in vapour-deposited multilayer thin films. The initial interface reaction started at around 100 degrees C with the formation of an In2Se stoichiometric compound. A kinetic analysis indicated that the interface reaction is characterized by the two-dimensional growth of preexisting In2Se nuclei to coalescence in the plane of the original In-a-Se interface. The heating onset and peak temperatures and the isothermal peak time for the reaction in the DSC scans were found to be independent of the multilayer modulation wavelength, implying a constant nucleation site density with different multilayer wavelengths.
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页码:299 / 305
页数:7
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