Novel molecular resist based on derivative of cholic acid

被引：48

作者：

Kim, JB ^{[1
]}

Yun, HJ ^{[1
]}

Kwon, YG ^{[1
]}

机构：

[1] Korea Adv Inst Sci & Technol, Sch Mol Sci, Dept Chem, Yusong Gu, Taejon 305701, South Korea

来源：

CHEMISTRY LETTERS | 2002年 / 10期

关键词：

D O I：

10.1246/cl.2002.1064

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Glycerol tris(glutarate 3-(tert-butyl cholate) ester) was synthesized as a low molecular weight amorphous resist material for 193-nm lithography, and it has good transmittance at 193 nm and good dry etch resistance to CF4 reactive ion etching. The resist formulated with this material forms well defined line and space patterns at a dose of 12 mJ cm(-2) using a mercury-xenone lamp in a contact printing mode.

引用

页码：1064 / 1065

页数：2

共 4 条

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