Low resistivity p-ZnO films fabricated by sol-gel spin coating

被引：92

作者：

Cao, Yongge ^{[1
]}

Miao, Lei ^{[1
]}

Tanemura, Sakae ^{[1
]}

Tanemura, Masaki ^{[1
]}

Kuno, Yohei ^{[1
]}

Hayashi, Yasuhiko ^{[1
]}

机构：

[1] Nagoya Inst Technol, Dept Environm Technol & Urban Planning, Showa Ku, Nagoya, Aichi 4668555, Japan

来源：

APPLIED PHYSICS LETTERS | 2006年 / 88卷 / 25期

关键词：

D O I：

10.1063/1.2215618

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

N-doped and In-N-codoped ZnO films were fabricated on quartz glass substrate by sol-gel spin coating. Their p-type conductivities were characterized by the Hall measurements, revealing low resistivities of the order of 10(-1) Omega cm. Thin-film junctions comprising an undoped ZnO layer and a N-doped ZnO layer displayed the typical rectifying characteristics, suggesting formation of p-n homojunctions at the interfaces. (c) 2006 American Institute of Physics.

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页数：3

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