Effective channel length and base width measurements by scanning capacitance microscopy

被引：16

作者：

Raineri, V ^{[1
]}

Lombardo, S ^{[1
]}

机构：

[1] CNR, IMETEM, I-95129 Catania, Italy

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2000年 / 18卷 / 01期

关键词：

D O I：

10.1116/1.591229

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this article scanning capacitance measurements (SCM), carried out directly on device sections, are presented. Quantitative SCM have been applied to determine the channel length in an advanced power metal-oxide-semiconductor device and the base width in a heterojunction bipolar transistor. Ion implantation in samples with 45 degrees-edge mask allowed us to demonstrate the SCM capability to image the depletion region and to delineate the junction position. The effective channel length was determined by considering the depletion region. A channel length of less than 200 nm was determined. Measurements on a heterojunction bipolar transistor device allowed us to image a base width of less than 180 nm. (C) 2000 American Vacuum Society. [S0734-211X(00)01501-8].

引用

页码：545 / 548

页数：4

共 3 条

[1] Quantitative scanning capacitance microscopy analysis of two-dimensional dopant concentrations at nanoscale dimensions [J].