Computer simulation for analysis of lattice polarity of wurtzite GaN{0001} film by coaxial impact collision ion scattering spectroscopy

被引：21

作者：

Sonoda, S

Shimizu, S

Suzuki, Y

Balakrishnan, K

Shirakashi, J

Okumura, H

Nishihara, T

Shinohara, M

机构：

[1] Ulvac Japan Ltd, Chigasaki, Kanagawa 2538568, Japan

[2] Electrotech Lab, Tsukuba, Ibaraki 3058568, Japan

[3] Shimaduz Corp, Kanagawa 2591304, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1999年 / 38卷 / 11A期

关键词：

CAICISS; GaN; polarity; sapphire; simulation;

D O I：

10.1143/JJAP.38.L1219

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Signal intensities of coaxial impact collision ion scattering spectra have been computed for c-axis-oriented GaN films at various incident angles in order to analyse the lattice polarity based on the three-dimensional two-atom triple-scattering model. It was found that Ga and N signal intensities show specific incident angle dependences on (0001) and (<000(1)over bar>) surfaces. The physical image of each characteristic feature in the spectra was also clarified.

引用

页码：L1219 / L1221

页数：3

共 8 条

[1] QUANTITATIVE SURFACE-STRUCTURE ANALYSIS BY LOW-ENERGY ION-SCATTERING [J].