Quantum interference in electron-hole generation in noncentrosymmetric semiconductors

被引：58

作者：

Fraser, JM ^{[1
]}

Shkrebtii, AI ^{[1
]}

Sipe, JE ^{[1
]}

van Driel, HM ^{[1
]}

机构：

[1] Univ Toronto, Dept Phys, Toronto, ON M5S 1A7, Canada

来源：

PHYSICAL REVIEW LETTERS | 1999年 / 83卷 / 20期

关键词：

D O I：

10.1103/PhysRevLett.83.4192

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We show that, when fundamental optical beams are present in a noncentrosymmetric medium simultaneously with their sum-frequency beam, quantum interference between single- and two-photon transitions modifies the net absorption, if the sum frequency corresponds to an energy greater than the band gap. At a macroscopic level this effect can be related to the imaginary part of a second-order susceptibility and can be used to coherently control carrier populations and optical absorption. We illustrate this novel effect using phased 1550 and 775 nm, 120 fs pulses incident on GaAs at 295 K.

引用

页码：4192 / 4195

页数：4

共 22 条

[1] Coherent control of photocurrent generation in bulk semiconductors [J].