Luminescence properties of boron and nitrogen doped graphene quantum dots prepared from arc-discharge-generated doped graphene samples

被引:215
作者
Dey, Sunita
Govindaraj, A.
Biswas, Kanishka
Rao, C. N. R. [1 ]
机构
[1] JNCASR, ICMS, Sheikh Saqr Lab, Chem & Phys Mat Unit,New Chem Unit, Bangalore 560064, Karnataka, India
关键词
CARBON NANODOTS; UP-CONVERSION; ELECTROCATALYTIC ACTIVITY; OXYGEN REDUCTION; OXIDE; SIZE; PERFORMANCE; EMISSION; ROUTE;
D O I
10.1016/j.cplett.2014.02.012
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070305 [高分子化学与物理];
摘要
Substitution of heteroatoms in graphene is known to tailor its band gap. Another approach to alter the band gap of graphene is to create zero-dimensional graphene quantum dots (GQDs). Here we present the synthesis and photoluminescence properties of B-doped graphene quantum dots (B-GQDs) for the first time, having prepared the B-GQDs by chemical scissoring of B-doped graphene generated by arcdischarge in gas phase. We compare the photoluminescence properties of B-GQDs with nitrogen-doped GQDs and pristine GQDs. Besides, excitation wavelength independent PL emission, excellent upconversion of PL emission is observed in GQDs as well as B-and N-doped GQDs. (C) 2014 Elsevier B.V. All rights reserved.
引用
收藏
页码:203 / 208
页数:6
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