Temperature and Doping-Dependent Renormalization Effects of the Low Energy Electronic Structure of Ba1-xKxFe2As2 Single Crystals

被引:21
作者
Koitzsch, A. [1 ]
Inosov, D. S. [1 ,2 ]
Evtushinsky, D. V. [1 ]
Zabolotnyy, V. B. [1 ]
Kordyuk, A. A. [1 ,3 ]
Kondrat, A. [1 ]
Hess, C. [1 ]
Knupfer, M. [1 ]
Buechner, B. [1 ]
Sun, G. L. [2 ]
Hinkov, V. [2 ]
Lin, C. T. [2 ]
Varykhalov, A. [4 ]
Borisenko, S. V. [1 ]
机构
[1] IFW Dresden, Inst Solid State Res, D-01171 Dresden, Germany
[2] Max Planck Inst Solid State Res, D-70569 Stuttgart, Germany
[3] Natl Acad Sci Ukraine, Inst Met Phys, UA-03142 Kiev, Ukraine
[4] BESSY, D-12489 Berlin, Germany
关键词
NODELESS SUPERCONDUCTING GAPS; BA0.6K0.4FE2AS2; ORDER;
D O I
10.1103/PhysRevLett.102.167001
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We investigate the low energy electronic structure of Ba1-xKxFe2As2 (x=0; 0.3, T-c=32 K) single crystals by angle-resolved photoemission spectroscopy with a focus on the renormalization of the dispersion. A kink feature is detected at E approximate to 25 meV for the doped compound which vanishes at T=200 K but stays virtually constant when T-c is crossed. Our experimental findings rule out the magnetic resonance mode as the origin of the kink and render conventional electron-phonon coupling unlikely. They put stringent restrictions on the dominant source of the electronic interaction channel.
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页数:4
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