Wire-bond failure mechanisms in plastic encapsulated microcircuits and ceramic hybrids at high temperatures

被引:25
作者
Oldervoll, F [1 ]
Strisland, F [1 ]
机构
[1] SINTEF, Informat & Commun Technol, NO-0314 Oslo, Norway
关键词
D O I
10.1016/j.microrel.2004.02.012
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Ceramic hybrids are the preferred solution when long-term high-temperature reliability is required, but standard plastic encapsulated microcircuits (PEMs) are an interesting alternative due to low price and high availability. Test vehicles with standard PEMs were subjected to thermal ageing at 150-175 degreesC. Six of eight vehicles failed after only three weeks at 175 degreesC, and the cause of failure was found to be microcracking at the interface between gold ball and aluminium bond pad giving rise to resistance increase. The intermetallic region was formed during high-temperature lead soldering and continued to develop during thermal ageing. The high-temperature performance of aluminium wire bonding to a selection of thick film metallizations on ceramic substrate was also investigated. Gold-palladium has previously been reported as a high-temperature solution, but we found that the mechanical strength of aluminium to gold-palladium (AuPd) degraded seriously at temperatures above 200 degreesC due to intermetallic formation. Aluminium to silver thick film plated with copper and nickel showed good mechanical strength and unaltered electrical resistance after four weeks thermal ageing at 250 degreesC. (C) 2004 Elsevier Ltd. All rights reserved.
引用
收藏
页码:1009 / 1015
页数:7
相关论文
共 14 条
[1]   Wire bond metallurgy for high temperature electronics [J].
Benoit, JT ;
Chin, S ;
Grzybowski, RR ;
Lin, ST ;
Jain, R ;
McCluskey, P ;
Bloom, T .
1998 FOURTH INTERNATIONAL HIGH TEMPERATURE ELECTRONICS CONFERENCE, 1998, :109-113
[2]  
GALLO AA, 1993, 43 EL COMP TECHN C, P356
[3]  
GROPPO R, 2001, P INT C HIGH TEMP EL, P105
[4]  
HARMAN GG, 1999, HIGHE TEMPERATURE EL, P752
[5]  
HOROWITZ SJ, 1979, SOLID STATE TECHNOL, V22, P37
[6]  
KROKOSZINSKI HJ, 2001, P HITEN, P34
[7]  
MARTIN T, 1998, HIGH TEMPERATURE ALU, P805
[8]   Reliable use of commercial technology in high temperature environments [J].
McCluskey, P ;
Mensah, K ;
O'Connor, C ;
Gallo, A .
MICROELECTRONICS RELIABILITY, 2000, 40 (8-10) :1671-1678
[9]   EXTREME TEMPERATURE-RANGE MICROELECTRONICS [J].
PALMER, DW ;
HECKMAN, RC .
IEEE TRANSACTIONS ON COMPONENTS HYBRIDS AND MANUFACTURING TECHNOLOGY, 1978, 1 (04) :333-340
[10]  
Passagrilli C., 2003, Advancing Microelectronics, V30, P25