H2S gas sensing mechanism of SnO2 films with ultrathin CuO dotted islands

被引:114
作者
Chowdhuri, A [1 ]
Sharma, P
Gupta, V
Sreenivas, K
Rao, KV
机构
[1] Univ Delhi, Dept Phys & Astrophys, Delhi 110007, India
[2] TmFy Royal Inst Technol KTH, Dept Mat Sci, SE-10044 Stockholm, Sweden
关键词
D O I
10.1063/1.1490154
中图分类号
O59 [应用物理学];
学科分类号
摘要
H2S gas interaction mechanisms of sputtered SnO2 and SnO2-CuO bilayer sensors with a varying distribution of the Cu catalyst on SnO2 are studied using Pt interdigital electrodes within the sensing film. Sensitivity to H2S gas is investigated in the range 20-1200 ppm. Changes induced on the surface, the SnO2-CuO interface, and the internal bulk region of the sensing SnO2 film upon exposure to H2S have been analyzed to explain the increasing sensitivity of three different sensors SnO2, SnO2-CuO, and SnO2 with CuO islands. SnO2 film covered with 0.6 mm diameter ultrathin (similar to10 nm) CuO dots is found to exhibit a high sensitivity of 7.3x10(3) at a low operating temperature of 150 degreesC. A response speed of 14 s for 20 ppm of H2S, and a fast recovery time of 118 s in flowing air have been measured. The presence of ultrathin CuO dotted islands allow effective removal of adsorbed oxygen from the uncovered SnO2 surface due to spillover of hydrogen dissociated from the H2S-CuO interaction, and the spillover mechanism is sensed through the observed fast response characteristics, and the high sensitivity of the SnO2-CuO-dot sensor. (C) 2002 American Institute of Physics.
引用
收藏
页码:2172 / 2180
页数:9
相关论文
共 26 条
  • [1] BOND GC, 1983, P INT S LYON VILL
  • [2] GAS-SENSING CHARACTERISTICS OF TIN OXIDE WHISKERS WITH DIFFERENT MORPHOLOGIES
    EGASHIRA, M
    MATSUMOTO, T
    SHIMIZU, Y
    IWANAGA, H
    [J]. SENSORS AND ACTUATORS, 1988, 14 (03): : 205 - 213
  • [3] GADKARI S, 2001, P NSPTS 8 IGCAR KALP
  • [4] Electrical properties evolution under reducing gaseous mixtures (H2, H2S, CO) of SnO2 thin films doped with Pd/Pt aggregates and used as polluting gas sensors
    Gaidi, M
    Chenevier, B
    Labeau, M
    [J]. SENSORS AND ACTUATORS B-CHEMICAL, 2000, 62 (01) : 43 - 48
  • [5] Ihokura K., 1994, STANNIC OXIDE GAS SE
  • [6] Ihokura K, 1981, NEW MATERIALS NEW PR, V1, P43
  • [7] Jianping L., 2000, SENSOR ACTUAT B-CHEM, V65, P111
  • [8] H2S GAS-DETECTION BY ZRO2-DOPED SNO2
    KANEFUSA, S
    NITTA, M
    HARADOME, M
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1988, 35 (01) : 65 - 69
  • [9] ADSORPTION OF ATOMIC-HYDROGEN ON ALUMINA BY HYDROGEN SPILLOVER
    KRAMER, R
    ANDRE, M
    [J]. JOURNAL OF CATALYSIS, 1979, 58 (02) : 287 - 295
  • [10] EQUILIBRIUM AND NONEQUILIBRIUM CONDUCTANCE RESPONSE OF SINTERED SNO2 SAMPLES TO H2S
    LANTTO, V
    ROMPPAINEN, P
    RANTALA, TS
    LEPPAVUORI, S
    [J]. SENSORS AND ACTUATORS B-CHEMICAL, 1991, 4 (3-4) : 451 - 455