Measurements of the velocity-field characteristic in AlGaN/GaN heterostructures

被引：13

作者：

Barker, JM ^{[1
]}

Ferry, DK

Goodnick, SM

Koleske, DD

Wickenden, AE

Henry, RL

机构：

[1] Arizona State Univ, Dept Elect Engn, Tempe, AZ 85287 USA

[2] Arizona State Univ, Ctr Solid State Elect Res, Tempe, AZ 85287 USA

[3] USN, Res Lab, Washington, DC 20375 USA

来源：

MICROELECTRONIC ENGINEERING | 2002年 / 63卷 / 1-3期

关键词：

GaN; AlGaN/GaN; high field transport; velocity-field characteristic; drift velocity;

D O I：

10.1016/S0167-9317(02)00627-5

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

AlGaN/GaN test structures, with an etched constriction have been fabricated and tested with, and without, a gate. A pulsed voltage input with a 200 ns pulse width and a four-point measurement were used in a 50 Omega environment to determine the room temperature velocity-field characteristic of the structures. A low field mobility of 250 cm(2)/V sand an estimated electron velocity of similar to2 x 10(7) cm/s was attained at a field of 180 kV/cm. 2002 Elsevier Science B.V. (C) All rights reserved.

引用

页码：193 / 197

页数：5

共 7 条

[1] Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures [J].

Ambacher, O ;

Smart, J ;

Shealy, JR ;

Weimann, NG ;

Chu, K ;

Murphy, M ;

Schaff, WJ ;

Eastman, LF ;

Dimitrov, R ;

Wittmer, L ;

Stutzmann, M ;

Rieger, W ;

Hilsenbeck, J .

JOURNAL OF APPLIED PHYSICS, 1999, 85 (06) :3222-3233

[2]

BARKER JM, IN PRESS PHYSICA B

[3] Comparison of high field electron transport in GaN and GaAs [J].

Foutz, BE ;

Eastman, LF ;

Bhapkar, UV ;

Shur, MS .

APPLIED PHYSICS LETTERS, 1997, 70 (21) :2849-2851

[4] Mobility of two-dimensional electrons in AlGaN/GaN modulation-doped field-effect transistors [J].

Oberhuber, R ;

Zandler, G ;

Vogl, P .

APPLIED PHYSICS LETTERS, 1998, 73 (06) :818-820

[5]

Shur M., 1986, GAAS DEVICES CIRCUIT

[6]

YU TH, IN PRESS J COMP ELEC

[7] Charge control and mobility studies for an AlGaN/GaN high electron mobility transistor [J].

Zhang, YF ;

Singh, J .

JOURNAL OF APPLIED PHYSICS, 1999, 85 (01) :587-594

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