Ballistic electron transport in stubbed quantum waveguides: Experiment and theory

被引:45
作者
Debray, P [1 ]
Raichev, OE
Vasilopoulos, P
Rahman, M
Perrin, R
Mitchell, WC
机构
[1] CEA, Serv Phys Etat Condense, F-91191 Gif Sur Yvette, France
[2] USAF, Res Lab, MLPO, Wright Patterson AFB, OH 45433 USA
[3] Natl Acad Sci Ukraine, Inst Semicond Phys, UA-252650 Kiev, Ukraine
[4] Concordia Univ, Dept Phys, Montreal, PQ H3G 1M8, Canada
[5] Univ Glasgow, Dept Phys, Glasgow G12 8QQ, Lanark, Scotland
关键词
D O I
10.1103/PhysRevB.61.10950
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We present results of experimental and theoretical investigations of electron transport through stub-shaped waveguides or electron stub tuners (ESTs) in the ballistic regime. Measurements of the conductance G as a function of voltages, applied to different gates V-i (i = bottom, top, and side) of the device, show oscillations in the region of the first quantized plateau that we attribute to reflection resonances. The oscillations are rather regular and almost periodic when the height h of the EST cavity is small compared to its width. When h is increased, the oscillations become less regular and broad depressions in G appear. A theoretical analysis, which accounts for the electrostatic potential formed by the gates in the cavity region, and a numerical computation of the transmission probabilities successfully explains the experimental observations. An important finding for real devices, defined by surface Schottky gates, is that the resonance minima result from size quantization along the transport direction of the EST.
引用
收藏
页码:10950 / 10958
页数:9
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