Non-Gaussian distribution of nearest-neighbour Coulomb peak spacings in metallic single-electron transistors

被引:16
作者
Furlan, M [1 ]
Heinzel, T
Jeanneret, B
Lotkhov, SV
Ensslin, K
机构
[1] ETH Zurich, Solid State Phys Lab, CH-8093 Zurich, Switzerland
[2] Swiss Fed Off Metrol, OFMET, CH-3003 Bern, Switzerland
[3] Phys Tech Bundesanstalt, D-38116 Braunschweig, Germany
来源
EUROPHYSICS LETTERS | 2000年 / 49卷 / 03期
关键词
D O I
10.1209/epl/i2000-00158-3
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
The distribution of nearest-neighbour spacings of Coulomb blockade oscillation peaks in normal conducting aluminum single-electron transistors is found to be non-Gaussian. A pronounced tail to reduced spacings is observed, which we attribute to impurity-specific parametric charge rearrangements close to the transistor. Our observation may explain the absence of a Wigner-Dyson distribution in the experimental nearest-neighbour spacing distributions in semiconductor quantum dots.
引用
收藏
页码:369 / 375
页数:7
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