Thermal stability of high surface area silicon carbide materials

被引：69

作者：

Krawiec, Piotr ^{[1
]}

Kaskel, Stefan ^{[1
]}

机构：

[1] Tech Univ Dresden, Dept Inorgan Chem, D-01062 Dresden, Germany

来源：

JOURNAL OF SOLID STATE CHEMISTRY | 2006年 / 179卷 / 08期

关键词：

silicon carbide; high surface area; mesoporous materials;

D O I：

10.1016/j.jssc.2006.02.034

中图分类号：

O61 [无机化学];

学科分类号：

070301 ; 081704 ;

摘要：

The synthesis of mesoporous silicon carbide by chemical vapor infiltration of dimethyl dichlorosilane into mesoporous silica SBA-15 and subsequent dissolution of the silica matrix with HF was investigated. The influence of the synthesis parameters of the composite material (SiC/SBA-15) on the final product (mesoporous SiC) was determined. Depending on the preparation conditions, materials with specific surface areas front 410 to 830 m(2) g(-1) and pore sizes between 2 and 10 nm with high mesopore volume (0.31-0.96 cm(3) g(-1)) were prepared. Additionally, the thermal stability of mesoporous silicon carbide at 1573 K in an inert atmosphere (argon) was investigated, and compared to that of SBA-15 and ordered mesoporous carbon (CMK-1). Mesoporous SiC has a much higher thermal textural stability as compared to SBA-15, but a lower stability than ordered mesoporous carbon CMK-1. (c) 2006 Elsevier Inc. All rights reserved.

引用

页码：2281 / 2289

页数：9

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