Core level and valence-band studies of the (111)2x2 surfaces of InSb and InAs

被引：46

作者：

Olsson, LO

Ilver, L

Kanski, J

Nilsson, PO

Andersson, CBM

Karlsson, UO

Hakansson, MC

机构：

[1] ROYAL INST TECHNOL,DEPT PHYS,S-10044 STOCKHOLM,SWEDEN

[2] LUND UNIV,DEPT SYNCHROTRON RADIAT RES,S-22362 LUND,SWEDEN

来源：

PHYSICAL REVIEW B | 1996年 / 53卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.53.4734

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The valence and core electronic surface states on the (111)2X2 surfaces of InSb and InAs have been studied by angle-resolved photoelectron spectroscopy. Similarities in data show that the vacancy-buckling model, which is known to describe the InSb(111)2x2 surface, also applies to InAs(111)2X2. Three surface valence bands are identified and their dispersions are mapped along symmetry directions in the surface Brillouin zone. The In 4d core levels show one surface shifted component while no surface shifted components of the Sb 4d or As 3d core levels could be resolved.

引用

收藏

页码：4734 / 4740

页数：7

相关论文

共 30 条

[1] SURFACE CORE-LEVEL SHIFTS OF INAS(110) [J].

ANDERSEN, JN ;

KARLSSON, UO .

PHYSICAL REVIEW B, 1990, 41 (06) :3844-3846

[2]

Andersson C. P. J., UNPUB

[3] SPUTTERED AND ANNEALED INAS(111)OVER-BAR - AN UNRECONSTRUCTED SURFACE [J].

ANDERSSON, CBM ;

KARLSSON, UO ;

HAKANSSON, MC ;

OLSSON, LO ;

ILVER, L ;

KANSKI, J ;

NILSSON, PO ;

PERSSON, PES .

SURFACE SCIENCE, 1994, 307 :885-889

[4] CORE-LEVEL PHOTOEMISSION FROM (III)-TYPE INAS SURFACES [J].

ANDERSSON, CBM ;

OLSSON, LO ;

HAKANSSON, MC ;

ILVER, L ;

KARLSSON, UO ;

KANSKI, J .

JOURNAL DE PHYSIQUE IV, 1994, 4 (C9) :209-212

[5]

ANDERSSON CBM, 1995, P 22 INT C PHYS SEM, P489

[6] DISORDER IN THE RECONSTRUCTED (111) 2X2 SURFACES OF INSB AND GASB [J].

BELZNER, A ;

RITTER, E ;

SCHULZ, H .

SURFACE SCIENCE, 1989, 209 (03) :379-386

[7] MODEL-INDEPENDENT STRUCTURE DETERMINATION OF THE INSB(111)2X2 SURFACE WITH USE OF SYNCHROTRON X-RAY-DIFFRACTION [J].

BOHR, J ;

FEIDENHANSL, R ;

NIELSEN, M ;

TONEY, M ;

JOHNSON, RL ;

ROBINSON, IK .

PHYSICAL REVIEW LETTERS, 1985, 54 (12) :1275-1278

[8] COMPARISON BETWEEN THE ELECTRONIC-STRUCTURES OF GAAS(111) AND GAAS(111) FROM ANGLE-RESOLVED PHOTOEMISSION [J].

BRINGANS, RD ;

BACHRACH, RZ .

PHYSICAL REVIEW LETTERS, 1984, 53 (20) :1954-1957

[9] VACANCY-INDUCED 2X2 RECONSTRUCTION OF THE GA(111) SURFACE OF GAAS [J].

CHADI, DJ .

PHYSICAL REVIEW LETTERS, 1984, 52 (21) :1911-1914

[10] NONLOCAL PSEUDOPOTENTIAL CALCULATIONS FOR ELECTRONIC-STRUCTURE OF 11 DIAMOND AND ZINCBLENDE SEMICONDUCTORS [J].

CHELIKOWSKY, JR ;

COHEN, ML .

PHYSICAL REVIEW B, 1976, 14 (02) :556-582