Combined tripod polishing and fib method for preparing semiconductor plan view specimens

Combining substantial pre-thinning of semiconductor device specimens via tripod polishing, followed by multiple, selective material removal steps with a focussed ion beam (FIB) tool, offers some unique possibilities with regard to preparing plan-view specimens at precise locations in the material below, and in the interconnect layers above, the semiconductor surface. Extension of these methods to other types of specimens in different configurations allows for the fabrication of multiple specimens on the same TEM grid that may not be possible by any other means.