(BAlGa)N quaternary system and epitaxial growth on (0001)6H-SiC substrate by low-pressure MO-VPE

被引：10

作者：

Kawanishi, H

Haruyama, M

Shirai, T

Suematsu, Y

机构：

来源：

PHYSICS AND SIMULATION OF OPTOELECTRONIC DEVICES V | 1997年 / 2994卷

关键词：

widegap nitrides; ultraviolet laser; lattice match; MOVPE;

D O I：

10.1117/12.275585

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

GaN and their alloy systems have a potential for the application of optical devices operating in blue and ultraviolet spectral region. In this paper, the possibility of (BAlGa)N quaternary system lattice matched to (0001) 6H-SiC substrate is described for ultraviolet emitters in the view of bandgap energy, lattice-matching to substrates. The estimated bandgap energy of quaternary system is ranging from 3.9 eV to 6.1 eV. It is also discussed that the crystal growth of (BAlGa)N systems using metalorganic vapor phase epitaxy. The quaternary system lattice-matched to (0001) 6H-SiC have an advantage for the laser application operating in ultraviolet spectral region.

引用

页码：52 / 59

页数：8